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Electro-optical device having a light-shielding film comprising alternating layers of silicide and nitrided silicide

US-7297981-B2

Abstract

A light-shielding film formed above a substrate has a multilayered thin film structure, in which a thin film not containing nitrogen and a thin film containing nitrogen are alternately arranged. Since the thin film containing nitrogen is formed in the light-shielding film, the stress caused by thermal distortion at the time of an annealing treatment is absorbed by the thin film containing nitrogen. Thus, cracks in an insulating film or a semiconductor film which extend from the light-shielding film can be prevented from occurring.

Patent figures（8）

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