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具有包含硅化物和氮化硅化物交替层的遮光膜的电光装置
Electro-optical device having a light-shielding film comprising alternating layers of silicide and nitrided silicide
US-7297981-B2用于电光装置，通过遮光膜减少热应力引起的裂纹。
专利摘要
形成在基板上方的遮光膜具有多层薄膜结构，其中不含氮的薄膜和含氮的薄膜交替布置。由于在遮光膜中形成含氮薄膜，退火处理时由热变形引起的应力被含氮薄膜吸收。因此，可以防止从遮光膜延伸的绝缘膜或半导体膜中的裂纹发生。
Original abstractA light-shielding film formed above a substrate has a multilayered thin film structure, in which a thin film not containing nitrogen and a thin film containing nitrogen are alternately arranged. Since the thin film containing nitrogen is formed in the light-shielding film, the stress caused by thermal distortion at the time of an annealing treatment is absorbed by the thin film containing nitrogen. Thus, cracks in an insulating film or a semiconductor film which extend from the light-shielding film can be prevented from occurring.
专利附图（8）
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