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晶圆级封装盖及其制造方法
Wafer level packaging cap and fabrication method thereof
US-7579685-B2用于晶圆级封装的盖板及其制造。
专利摘要
提供了一种用于晶圆级封装的晶圆级封装盖及其方法。该晶圆级封装盖覆盖其上具有器件的器件晶圆，包括：盖晶圆，其底表面上具有腔体，该腔体提供用于接收器件的空间，并与器件晶圆一体结合；多条金属线，形成在盖晶圆的底表面上，以对应于形成在器件晶圆上以电连接到器件的多个器件焊盘；多个缓冲部分，连接到多条金属线并包括具有多个凹槽的缓冲晶圆和填充在多个凹槽中的金属；多个连接杆，电连接到多个缓冲部分并从缓冲部分的顶部穿透盖晶圆；以及多个盖焊盘，形成在盖晶圆的顶表面上并电连接到多个连接杆。
Original abstractA wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.
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